ELECTRONIC AND OPTICAL PROPERTIES OF TWO-DIMENSIONAL TRANSITION METAL DICHALCOGENIDES FOR NEXT-GENERATION OPTOELECTRONIC DEVICES
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have emerged as a transformative class of materials in the field of nanoelectronics and optoelectronics. This article investigates the electronic and optical properties of molybdenum disulfide (MoS2), focusing on the transition from an indirect bandgap in bulk form to a direct bandgap in a monolayer structure. The influence of quantum confinement on charge carrier mobility and exciton binding energy is analyzed through recent theoretical and experimental data. Our study highlights how the unique band structure of monolayer MoS2 enhances light-matter interactions, providing a significant advantage for next-generation field-effect transistors (FETs) and high-efficiency photodetectors. Furthermore, the challenges of integrating 2D materials into current semiconductor manufacturing processes are discussed, alongside potential solutions for enhancing device stability and performance.
Keywords
2D Semiconductors, Transition Metal Dichalcogenides (TMDCs), Molybdenum Disulfide (MoS2), Quantum Confinement, Bandgap Engineering, Optoelectronics, Field-Effect Transistors (FETs).
References
- Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010). Atomically thin MoS2: A new direct-gap semiconductor. Physical Review Letters, 105(13), 136805.
- Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C. Y., ... & Wang, F. (2010). Emerging photoluminescence in monolayer MoS2. Nano Letters, 10(4), 1271-1275.
- Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., Strano, M. S. (2012). Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology, 7(11), 699-712.
- Xiao, D., Liu, G. B., Feng, W., Xu, X., & Yao, W. (2012). Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Physical Review Letters, 108(19), 196802.
- Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014). Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano, 8(2), 1102-1120.