INFLUENCE OF COPPER AND IRIDIUM ATOM CLUSTERS ON THE RECOMBINATION PROPERTIES OF SILICON

Authors

Sherzod Zokirjonovich Rafikov Institute of Nuclear Physics of The Academy of Sciences of The Republic of Uzbekistan

Keywords:

Copper, iridium, atom clusters

Abstract

This article investigates the influence of copper (Cu) and iridium (Ir) atom clusters on the recombination properties of silicon (Si). Recombination processes significantly impact the performance of semiconductor devices, and understanding the effects of impurities or dopants is crucial for optimizing device efficiency. Experimental data and theoretical models are employed to analyze the recombination properties of Si in the presence of Cu and Ir atom clusters. The findings reveal the effects of these clusters on carrier lifetime, surface recombination velocity, and device performance, providing valuable insights for the design and fabrication of high-performance silicon-based devices. This research contributes to the understanding of how Cu and Ir atom clusters influence recombination in Si and offers possibilities for enhancing device performance through tailored material design and optimization strategies.

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Published

2023-06-01

How to Cite

Sherzod Zokirjonovich Rafikov. (2023). INFLUENCE OF COPPER AND IRIDIUM ATOM CLUSTERS ON THE RECOMBINATION PROPERTIES OF SILICON. International Multidisciplinary Journal for Research & Development, 10(06), 01–05. Retrieved from https://ijmrd.in/index.php/imjrd/article/view/19